VFT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VFT2045C-M3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A .

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Datasheet Specifications

Part number: VFT2045C-M3
Manufacturer: Vishay ↗
File Size: 80.05 KB
Datasheet: VFT2045C-M3-Vishay.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 45 V 160 A 0.41 V 150 °C ITO-220AB Diode variation Dual common cathode MECH

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VFT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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