VFT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

New Product VFT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A TMBS ® I.

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Datasheet Specifications

Part number: VFT6045C
Manufacturer: Vishay ↗ Siliconix
File Size: 97.94 KB
Datasheet: VFT6045C_VishaySiliconix.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V

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VFT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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