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VFT6045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VFT6045C-M3 Description

www.vishay.com VFT6045C-M3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A T.

VFT6045C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

VFT6045C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 45 V 320 A 0.47 V 150 °C ITO-220AB Diode variation Dual common cathode MECH

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Datasheet Details

Part number
VFT6045C-M3
Manufacturer
Vishay ↗
File Size
80.44 KB
Datasheet
VFT6045C-M3-Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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