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VFT1045BP

Trench MOS Barrier Schottky Rectifier

VFT1045BP Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2011/65/EU 2 1

* Halogen-free according to IEC 61249-2

VFT1045BP Datasheet (141.01 KB)

Preview of VFT1045BP PDF

Datasheet Details

Part number:

VFT1045BP

Manufacturer:

Vishay ↗

File Size:

141.01 KB

Description:

Trench mos barrier schottky rectifier.
VFT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 .

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VFT1045BP Trench MOS Barrier Schottky Rectifier Vishay

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