* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Ha
VFT3080S Datasheet (136.31 KB)
VFT3080S
136.31 KB
Trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VFT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS .
📁 Related Datasheet
VFT3080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VFT3080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VFT3080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VFT30-28 VHF POWER MOSFET (Advanced Semiconductor)
VFT30-50 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT3045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VFT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
