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VFT3080S Trench MOS Barrier Schottky Rectifier

VFT3080S Description

www.DataSheet.co.kr New Product VFT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS .

VFT3080S Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Ha

VFT3080S Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 80 V 200 A 0.73 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 9

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Datasheet Details

Part number
VFT3080S
Manufacturer
Vishay ↗
File Size
136.31 KB
Datasheet
VFT3080S_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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