* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU 2 1
* Halogen-free according to IEC 61249-2
VFT3045BP Datasheet (141.04 KB)
VFT3045BP
141.04 KB
Trench mos barrier schottky rectifier.
VFT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 .
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