Datasheet4U Logo Datasheet4U.com

VFT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VFT3060G-E3 Description

VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

VFT3060G-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Not recommended for PCB bottom side wave mounting
* Solder

📥 Download Datasheet

Preview of VFT3060G-E3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VFT3060G-E3
Manufacturer
Vishay ↗
File Size
143.16 KB
Datasheet
VFT3060G-E3-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VFT30-28 - VHF POWER MOSFET (Advanced Semiconductor)
  • VFT30-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
  • VFT300-28 - VHF POWER MOSFET Silicon N-Channel Enhancement Mode (Advanced Semiconductor)
  • VFT300-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
  • VFT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VFT15-12 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
  • VFT15-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

📌 All Tags

Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VFT3060G-E3-like datasheet