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AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs

AP4951GM-HF-3 Description

Advanced Power Electronics Corp.AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge Fast Switchin.
G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an.

AP4951GM-HF-3 Applications

* G2 S1 S2 D2 D2 D1 D1 SO-8 (M) G2 S2 G1 S1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear

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Datasheet Details

Part number
AP4951GM-HF-3
Manufacturer
Advanced Power Electronics
File Size
85.84 KB
Datasheet
AP4951GM-HF-3-AdvancedPowerElectronics.pdf
Description
Dual P-channel Enhancement-mode Power MOSFETs

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Advanced Power Electronics AP4951GM-HF-3-like datasheet