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BLV32F NPN SILICON RF POWER TRANSISTOR

BLV32F Description

BLV32F NPN SILICON RF POWER TRANSISTOR .
The ASI BLV32F is Designed for in linear v. Diffused emitter ballast.

BLV32F Features

* Diffused emitter ballasting resistors
* PG = 16 dB at 10 W/224 MHz
* Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC O O 4.0 A 60 V 32 V 60 V 4.0 V 82 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.1 C/W

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Preview of BLV32F PDF

Datasheet Details

Part number
BLV32F
Manufacturer
Advanced Semiconductor
File Size
18.99 KB
Datasheet
BLV32F_AdvancedSemiconductor.pdf
Description
NPN SILICON RF POWER TRANSISTOR

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📌 All Tags

NPN SILICON POWER TRANSISTOR Advanced Semiconductor
Advanced Semiconductor BLV32F-like datasheet