ATF10736 Datasheet - Agilent(Hewlett-Packard)

ATF10736 0.512 GHz General Purpose Gallium Arsenide FET

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FE.

ATF10736 Features

* High Associated Gain: 13.0␣ dB Typical at 4␣ GHz

* Low Bias: VDS = 2 V, IDS = 25␣ mA

* High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz

* Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz

* Cost Effective Ceramic Microstrip Package

* Tape-and-Reel Pac

ATF10736 Datasheet (80.82 KB)

ATF10736 Datasheet Preview — Preview of ATF10736 PDF

Datasheet Details

Part number:

ATF10736

Manufacturer:

Agilent(Hewlett-Packard)

File Size:

80.82 KB

Description:

0.512 ghz general purpose gallium arsenide fet.

📁 Related Datasheet

ATF13284 1-16 Ghz Low Noise Gallium Arsenide FET (Agilent Technologies)

ATF1500A High-performance EPLD (ATMEL Corporation)

ATF1500ABV High-performance EE PLD (ATMEL)

ATF1500AL High-performance EPLD (ATMEL)

ATF1502AS High-performance EEPROM (ATMEL)

ATF1502ASL High-performance EEPROM (ATMEL)

ATF1502BE High Speed CPLD (ATMEL Corporation)

ATF1502SE EEPROM (ATMEL Corporation)

TAGS

ATF10736 0.512 GHz General Purpose Gallium Arsenide FET Agilent(Hewlett-Packard)

ATF10736 Distributor