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ATF10736, ATF10736_Agilent(Hewlett Datasheet - Agilent(Hewlett-Packard)

ATF10736 - 0.512 GHz General Purpose Gallium Arsenide FET

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FE.

ATF10736 Features

* High Associated Gain: 13.0␣ dB Typical at 4␣ GHz

* Low Bias: VDS = 2 V, IDS = 25␣ mA

* High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz

* Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz

* Cost Effective Ceramic Microstrip Package

* Tape-and-Reel Pac

ATF10736_Agilent(Hewlett-Packard).pdf

This datasheet PDF includes multiple part numbers: ATF10736, ATF10736_Agilent(Hewlett. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ATF10736, ATF10736_Agilent(Hewlett

Manufacturer:

Agilent(Hewlett-Packard)

File Size:

80.82 KB

Description:

0.512 ghz general purpose gallium arsenide fet.

Note:

This datasheet PDF includes multiple part numbers: ATF10736, ATF10736_Agilent(Hewlett.
Please refer to the document for exact specifications by model.

ATF10736 Distributor

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📌 All Tags

ATF10736_Agilent(Hewlett 0.512 GHz General Purpose Gallium Arsenide FET Agilent(Hewlett-Packard)