Description
HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet .
The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process.
Features
* Low Junction Capacitance
* fc >200 GHz
* Lower Temperature Coefficient than Silicon
* Durable Construction
* Typical 6 gram beam lead strength
* High power handling capability
231 120 (9.1) (4.7)
Note: All dimensions in microns (mils)
Beam Lead = 7-9
Applications
* This diode is suitable for medium
* low barrier, zero bias detector applications. The HSCH916x is functional through W
* band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits. Assembly Techniques
Diodes are ESD sensitive. ESD preventive measures must be employed