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AFN2444WS

N-Channel Enhancement Mode MOSFET

AFN2444WS Features

* z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.0A,RDS(ON)=20mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/DC Converter z High Frequency Switching Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Inform

AFN2444WS General Description

AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFN2444WS Datasheet (407.32 KB)

Preview of AFN2444WS PDF

Datasheet Details

Part number:

AFN2444WS

Manufacturer:

Alfa-MOS

File Size:

407.32 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

AFN2444WS N-Channel Enhancement Mode MOSFET Alfa-MOS

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