AFN2448WS Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN2448WS Features

* z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z ESD Protection ( >2KV ) Diode design

* in z DFN2X2-6L package design Application z For Smart Phones and Mobile Computing - Load Swit

AFN2448WS General Description

AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFN2448WS Datasheet (418.74 KB)

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AFN2448WS

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Alfa-MOS

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418.74 KB

Description:

N-channel enhancement mode mosfet.

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AFN2448WS N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2448WS Features

AFN2448WS General Description

Datasheet Details

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