Part number:
AFN3414A
Manufacturer:
Alfa-MOS
File Size:
400.83 KB
Description:
20v n-channel mosfet.
* ID=3.8A,RDS(ON)=55mΩ@VGS=4.5V
* ID=2.8A,RDS(ON)=65mΩ@VGS=2.5V
* ID=1.8A,RDS(ON)=85mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design Application
* Portable Equipm
AFN3414A Datasheet (400.83 KB)
AFN3414A
Alfa-MOS
400.83 KB
20v n-channel mosfet.
📁 Related Datasheet
AFN3414AS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3414AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN3410 - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3410, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFN3416 - N-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3416, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFN3416AS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3416AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN3400A - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3400A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN3400AS - 30V N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN3400S - N-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3400S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN3402A - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN3402A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.