AFN3416, AFN3416-Alfa - N-Channel Enhancement Mode MOSFET

Alfa-MOS

Datasheet Details

Part number	AFN3416, AFN3416-Alfa
Manufacturer	Alfa-MOS
File Size	554.35 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN3416-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFN3416, AFN3416-Alfa. Please refer to the document for exact specifications by model.

AFN3416, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Published: Dec 11, 2018 |