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AFN3416

N-Channel Enhancement Mode MOSFET

AFN3416 Features

* 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net Worki

AFN3416 General Description

AFN3416, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN3416 Datasheet (554.35 KB)

Preview of AFN3416 PDF

Datasheet Details

Part number:

AFN3416

Manufacturer:

Alfa-MOS

File Size:

554.35 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

AFN3416 N-Channel Enhancement Mode MOSFET Alfa-MOS

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