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AFN3416, AFN3416-Alfa Datasheet - Alfa-MOS

AFN3416 N-Channel Enhancement Mode MOSFET

AFN3416, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN3416 Features

* 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net Worki

AFN3416-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN3416, AFN3416-Alfa. Please refer to the document for exact specifications by model.
AFN3416 Datasheet Preview Page 2 AFN3416 Datasheet Preview Page 3

Datasheet Details

Part number:

AFN3416, AFN3416-Alfa

Manufacturer:

Alfa-MOS

File Size:

554.35 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3416, AFN3416-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN3416 AFN3416-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN3416 Distributor