AFN4808W Datasheet - Alfa-MOS

N-Channel MOSFET

AFN4808W Features

* 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=42mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X3-8L package design Application Load Switch Portable Equipment Battery Powered Syst

AFN4808W General Description

AFN4808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN4808W Datasheet (580.81 KB)

AFN4808W Datasheet Preview — Preview of AFN4808W PDF

Datasheet Details

Part number:

AFN4808W

Manufacturer:

Alfa-MOS

File Size:

580.81 KB

Description:

N-channel mosfet.

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AFN4808W N-Channel MOSFET Alfa-MOS

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AFN4808W Features

AFN4808W General Description

Datasheet Details

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Description:

AFN4808W Distributor