AFN4842WS - N-Channel MOSFET
AFN4842WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descript
AFN4842WS Features
* 40V/10A,RDS(ON)= 18mΩ@VGS=10V 40V/ 8A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Pa
