AFN4822WS - N-Channel MOSFET
AFN4822WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descript
AFN4822WS Features
* 30V/6.0A,RDS(ON)=34mΩ@VGS=10V 30V/5.0A,RDS(ON)=44mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering
