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AFN4900W

60V N-Channel MOSFET

AFN4900W Features

* ID=6.8A,RDS(ON)=100mΩ@VGS=10V

* ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* SOP-8P package design Application

* Motor and Load Control

* AD/DC Inverter Systems.

* Power Management in White LED System Pin Define Pin 1 2

AFN4900W General Description

AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN4900W Datasheet (319.14 KB)

Preview of AFN4900W PDF

Datasheet Details

Part number:

AFN4900W

Manufacturer:

Alfa-MOS

File Size:

319.14 KB

Description:

60v n-channel mosfet.

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TAGS

AFN4900W 60V N-Channel MOSFET Alfa-MOS

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