AFN4900W Datasheet, Mosfet, Alfa-MOS

AFN4900W Features

  • Mosfet
  • ID=6.8A,RDS(ON)=100mΩ@VGS=10V
  • ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V
  • Super high density cell design for extremely low RDS (ON)
  • SOP-8P package design App

PDF File Details

Part number:

AFN4900W

Manufacturer:

Alfa-MOS

File Size:

319.14kb

Download:

📄 Datasheet

Description:

60v n-channel mosfet. AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

Datasheet Preview: AFN4900W 📥 Download PDF (319.14kb)
Page 2 of AFN4900W Page 3 of AFN4900W

AFN4900W Application

  • Applications Pin Description ( SOP-8P ) AFN4900W 60V N-Channel Enhancement Mode MOSFET Features
  • ID=6.8A,RDS(ON)=100mΩ@VGS=10V

TAGS

AFN4900W
60V
N-Channel
MOSFET
Alfa-MOS

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