Part number:
AFN4906W
Manufacturer:
Alfa-MOS
File Size:
280.56 KB
Description:
N-channel mosfet.
* 40V/6.8A,RDS(ON)=52mΩ@VGS=10V 40V/5.6A,RDS(ON)=70mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2
AFN4906W Datasheet (280.56 KB)
AFN4906W
Alfa-MOS
280.56 KB
N-channel mosfet.
📁 Related Datasheet
AFN4900W - 60V N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN4904WS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4904WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN4910W - MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
AFN4910W
40V N1 & N2 Pair Enhancement Mode MOSFET
General Description
AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced.
AFN4914WS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4914WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN4922W - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4922W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN4924W - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4924W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN4936WS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4936WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN4944WS - 30V N-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN4944WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.