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AFN4906W

N-Channel MOSFET

AFN4906W Features

* 40V/6.8A,RDS(ON)=52mΩ@VGS=10V 40V/5.6A,RDS(ON)=70mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2

AFN4906W General Description

AFN4906W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN4906W Datasheet (280.56 KB)

Preview of AFN4906W PDF

Datasheet Details

Part number:

AFN4906W

Manufacturer:

Alfa-MOS

File Size:

280.56 KB

Description:

N-channel mosfet.

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TAGS

AFN4906W N-Channel MOSFET Alfa-MOS

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