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AFN4910W

MOSFET

AFN4910W Features

* N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V Application Car Charger POL, IBC Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.

AFN4910W General Description

AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN4910W Datasheet (688.82 KB)

Preview of AFN4910W PDF

Datasheet Details

Part number:

AFN4910W

Manufacturer:

Alfa-MOS

File Size:

688.82 KB

Description:

Mosfet.

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TAGS

AFN4910W MOSFET Alfa-MOS

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