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AFN6561, AFN6561-Alfa 30V N-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN6561, AFN6561-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN6561, AFN6561-Alfa
Manufacturer
Alfa-MOS
File Size
348.13 KB
Datasheet
AFN6561-Alfa-MOS.pdf
Description
30V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN6561, AFN6561-Alfa.
Please refer to the document for exact specifications by model.

Features

* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)

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