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AFN6506S

N-Channel MOSFET

AFN6506S Features

* z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW Application z Synchronous Rectification z High Power Density DC/DC z VRM

AFN6506S General Description

AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN6506S Datasheet (390.18 KB)

Preview of AFN6506S PDF

Datasheet Details

Part number:

AFN6506S

Manufacturer:

Alfa-MOS

File Size:

390.18 KB

Description:

N-channel mosfet.

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TAGS

AFN6506S N-Channel MOSFET Alfa-MOS

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