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AFN6506S, AFN6506S-Alfa Datasheet - Alfa-MOS

AFN6506S N-Channel MOSFET

AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN6506S Features

* z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW Application z Synchronous Rectification z High Power Density DC/DC z VRM

AFN6506S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN6506S, AFN6506S-Alfa. Please refer to the document for exact specifications by model.
AFN6506S Datasheet Preview Page 2 AFN6506S Datasheet Preview Page 3

Datasheet Details

Part number:

AFN6506S, AFN6506S-Alfa

Manufacturer:

Alfa-MOS

File Size:

390.18 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN6506S, AFN6506S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN6506S AFN6506S-Alfa N-Channel MOSFET Alfa-MOS

AFN6506S Distributor