AFN6003S Datasheet, Mosfet, Alfa-MOS

✔ AFN6003S Features

60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Synchronous Recti

✔ AFN6003S Application

Pin Description ( TO-220-3L ) Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high

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Part number:

AFN6003S

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Alfa-MOS

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379.96kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

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AFN6003S N-Channel Enhancement Mode MOSFET Alfa-MOS