AFN6003S Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN6003S Features

* 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN6003S

AFN6003S General Description

AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN6003S Datasheet (379.96 KB)

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AFN6003S

Manufacturer:

Alfa-MOS

File Size:

379.96 KB

Description:

N-channel enhancement mode mosfet.

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AFN6003S N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN6003S Features

AFN6003S General Description

Datasheet Details

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