AFN7402 - N-Channel Enhancement Mode MOSFET
AFN7402, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN7402 Features
* 20V/3.6A,RDS(ON)=60mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=70mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Portable Equipment Battery Powered System Net Working
