AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN7412 Features
* 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Portable Equipment Battery Powered System Net Working
Datasheet Details
AFN7412, AFN7412-Alfa
Alfa-MOS
553.29 KB
N-channel enhancement mode mosfet.
This datasheet PDF includes multiple part numbers: AFN7412, AFN7412-Alfa.
Please refer to the document for exact specifications by model.
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