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AFN7412, AFN7412-Alfa Datasheet - Alfa-MOS

AFN7412 N-Channel Enhancement Mode MOSFET

AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN7412 Features

* 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Portable Equipment Battery Powered System Net Working

AFN7412-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN7412, AFN7412-Alfa. Please refer to the document for exact specifications by model.
AFN7412 Datasheet Preview Page 2 AFN7412 Datasheet Preview Page 3

Datasheet Details

Part number:

AFN7412, AFN7412-Alfa

Manufacturer:

Alfa-MOS

File Size:

553.29 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN7412, AFN7412-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN7412 AFN7412-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN7412 Distributor