AFN7412S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN7412S Features
* 30V/8A,RDS(ON)=24mΩ@VGS=10V 30V/7A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design Application DC-DC Converter POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Order
Datasheet Details
AFN7412S, AFN7412S-Alfa
Alfa-MOS
573.34 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: AFN7412S, AFN7412S-Alfa.
Please refer to the document for exact specifications by model.
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