AFN9997, AFN9997-Alfa N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology AFN9997 100V N-Channel Enhancement Mode MOSFET General .
AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN9997 Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN9997, AFN9997-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN9997, AFN9997-Alfa
Manufacturer: Alfa-MOS
File Size: 518.28 KB
Datasheet: AFN9997-Alfa-MOS.pdf
Description: N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN9997, AFN9997-Alfa.
Please refer to the document for exact specifications by model.

Features

* 100V/8A,RDS(ON)= 120mΩ@VGS=10V
* 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)

AFN9997 Distributors

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📌 All Tags

AFN9997-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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