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AFP2367AS

P-Channel MOSFET

AFP2367AS Features

* -20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Power Management in Note book Portable Equip

AFP2367AS General Description

AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFP2367AS Datasheet (603.15 KB)

Preview of AFP2367AS PDF

Datasheet Details

Part number:

AFP2367AS

Manufacturer:

Alfa-MOS

File Size:

603.15 KB

Description:

P-channel mosfet.

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AFP2367AS P-Channel MOSFET Alfa-MOS

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