AFP2307A, AFP2307A-Alfa Datasheet - Alfa-MOS

AFP2307A - P-Channel MOSFET

AFP2307A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP2307A Features

* -20V/-1.2A, RDS(ON)= 520 mΩ@ VGS =-4.5V -20V/-1.0A, RDS(ON)= 870 mΩ@ VGS =-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids,

AFP2307A-Alfa-MOS.pdf