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AFP2311, AFP2311-Alfa Datasheet - Alfa-MOS

AFP2311 20V P-Channel Enhancement Mode MOSFET

AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP2311 Features

* -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=100mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Ne

AFP2311-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP2311, AFP2311-Alfa. Please refer to the document for exact specifications by model.
AFP2311 Datasheet Preview Page 2 AFP2311 Datasheet Preview Page 3

Datasheet Details

Part number:

AFP2311, AFP2311-Alfa

Manufacturer:

Alfa-MOS

File Size:

489.47 KB

Description:

20v p-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP2311, AFP2311-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP2311 AFP2311-Alfa 20V P-Channel Enhancement Mode MOSFET Alfa-MOS

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