AFP2319A, AFP2319A-Alfa Datasheet - Alfa-MOS

AFP2319A - 40V P-Channel MOSFET

AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP2319A Features

* ID=-3.0A,RDS(ON)=90mΩ@VGS=-10V

* ID=-2.4A,RDS(ON)=120mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design Application

* Load Switch

* DC-DC System Pin Define Pin

AFP2319A-Alfa-MOS.pdf