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AFP2311A, AFP2311A-Alfa Datasheet - Alfa-MOS

AFP2311A 20V P-Channel Enhancement Mode MOSFET

AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP2311A Features

* -20V/-2.8A,RDS(ON)=55mΩ@VGS=4.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-1.8A,RDS(ON)=92mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Portable Equipment Battery Powered System Net Wo

AFP2311A-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP2311A, AFP2311A-Alfa. Please refer to the document for exact specifications by model.
AFP2311A Datasheet Preview Page 2 AFP2311A Datasheet Preview Page 3

Datasheet Details

Part number:

AFP2311A, AFP2311A-Alfa

Manufacturer:

Alfa-MOS

File Size:

621.26 KB

Description:

20v p-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP2311A, AFP2311A-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP2311A AFP2311A-Alfa 20V P-Channel Enhancement Mode MOSFET Alfa-MOS

AFP2311A Distributor