Part number:
AFP2309A
Manufacturer:
Alfa-MOS
File Size:
427.22 KB
Description:
60v p-channel mosfet.
* ID=-1.8A,RDS(ON)=190mΩ@VGS=-10V
* ID=-1.6A,RDS(ON)=230mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design Application
* Power Management in Note book
* LED Displa
AFP2309A Datasheet (427.22 KB)
AFP2309A
Alfa-MOS
427.22 KB
60v p-channel mosfet.
📁 Related Datasheet
AFP2301AS - 20V P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFP2303A - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFP2303AS23RG - P-Channel MOSFET
(VBsemi)
AFP2303AS23RG
AFP2303AS23RG-VB Datasheet
.VBsemi.
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 1.
AFP2307A - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2307A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFP2311 - 20V P-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP2311A - 20V P-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFP2317 - P-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP2319A - 40V P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.