AFP2363AS, AFP2363AS-Alfa Datasheet - Alfa-MOS

AFP2363AS - P-Channel MOSFET

AFP2363AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFP2363AS Features

* -60V/-2.4A,RDS(ON)=175mΩ@VGS=-10V -60V/-2.0A,RDS(ON)=225mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Power Management Load switch DC-DC converter Pin Define Pin 1 2 3 Symbol G

AFP2363AS-Alfa-MOS.pdf