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AFP3050S

P-Channel Enhancement Mode MOSFET

AFP3050S Features

* -30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application LED Display Load Switch CCFL Inverter Power Management in Notebook Computer, Pin Define Pin 1 2 3 Symbol

AFP3050S General Description

AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP3050S Datasheet (849.17 KB)

Preview of AFP3050S PDF

Datasheet Details

Part number:

AFP3050S

Manufacturer:

Alfa-MOS

File Size:

849.17 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP3050S P-Channel Enhancement Mode MOSFET Alfa-MOS

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