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AFP3056WS

30V P-Channel Enhancement Mode MOSFET

AFP3056WS Features

* ID= -5.0A,RDS(ON)=55mΩ@VGS=-10.0V

* ID= -4.0A,RDS(ON)=70mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-6L package design Application

* Power Management in Note book

* LED D

AFP3056WS General Description

AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFP3056WS Datasheet (446.12 KB)

Preview of AFP3056WS PDF

Datasheet Details

Part number:

AFP3056WS

Manufacturer:

Alfa-MOS

File Size:

446.12 KB

Description:

30v p-channel enhancement mode mosfet.

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TAGS

AFP3056WS 30V P-Channel Enhancement Mode MOSFET Alfa-MOS

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