AS7C33128PFD36B Description
February 2005 ® AS7C33128PFD32B AS7C33128PFD36B 3.3V 128K X 32/36 pipeline burst synchronous SRAM .
The AS7C33128PFD32B and AS7C33128PFD36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 w.
AS7C33128PFD36B Features
* Organization: 131,072 words × 32 or 36 bits
* Fast clock speeds to 200 MHz
* Fast clock to data access: 3.0/3.5/4.0 ns
* Fast OE access time: 3.0/3.5/4.0 ns
* Fully synchronous register-to-register operation
* Double-cycle deselect
* Asynchro
AS7C33128PFD36B Applications
* Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable GWE writes all 32/36 bits regardless of the state of individual BW[a:d] inputs. Alternately, when GWE is High, one or more bytes may be written by asserting BWE and the appropriat
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