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AS4C14405, AS4C14400 (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)

AS4C14405 Description

High Performance 1M×4 CMOS DRAM AS4C14400 AS4C14405 ® 1M-bit × 4 CMOS DRAM (Fast page mode or EDO) Preliminary information .
26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row address.

AS4C14405 Features

* Organization: 1,048,576 words × 4 bits
* High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time
* 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh
* Low power consump

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AS4C14405, AS4C14400. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AS4C14405, AS4C14400
Manufacturer
Alliance Semiconductor
File Size
398.47 KB
Datasheet
AS4C14400_AllianceSemiconductor.pdf
Description
(AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
Note
This datasheet PDF includes multiple part numbers: AS4C14405, AS4C14400.
Please refer to the document for exact specifications by model.

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📌 All Tags

AS4C14400 AS4C14405 1M-bit CMOS DRAM Fast page mode EDO Alliance Semiconductor
Alliance Semiconductor AS4C14405-like datasheet