AOD4128 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

VDS (V) = 25V (VGS = 10V) ID = 60 A RDS(ON) < 4 mΩ (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol V Drain-Source Voltage DS VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation Power Dissipation B C Maximum 25 ±20 60 60 165 45 304 75 37 2.0 1.3 -55 to 175 Units V V.

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