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AON2801 Dual P-Channel MOSFET

AON2801 Description

AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General .
The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

AON2801 Features

* VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 D1 D2 D1 G2 S2 Top Bottom Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C CurrentA TA=70°C Pulsed Drain

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Dual P-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AON2801-like datasheet