AO4900

Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

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Datasheet Details

Part number:

AO4900

Manufacturer:

Alpha & Omega Semiconductors

File Size:

143.45 KB

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📥 AO4900 Datasheet PDF

Description:

Dual n-channel enhancement mode field effect transistor.
AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Descripti.
The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two.

✔ AO4900 Features

VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/

✔ AO4900 Application

OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME AN

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AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors