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AO4900 - Dual N-Channel Enhancement Mode Field Effect Transistor

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Alpha & Omega Semiconductors

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AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor by Alpha & Omega Semiconductors - Datasheet Preview — Datasheet preview – AO4900

Datasheet Details

Part number	AO4900
Manufacturer	Alpha & Omega Semiconductors
File Size	143.45 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO4900 Datasheet
Additional preview pages of the AO4900 datasheet.

Product details

Description

The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Features

VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V).

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Other Datasheets by Alpha & Omega Semiconductors

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Published: May 22, 2010 |