AO4912 - Dual N-Channel Enhancement Mode Field Effect Transistor
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.
A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost effici
AO4912 Features
* Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V)
