AO4902 Datasheet - Alpha & Omega Semiconductors

AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor

The AO4902 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory. Standard Product www.DataSheet4U.com AO4902 i.

AO4902 Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 K1 K2 S2/A2 G2 S1/A1 G1 1 2 3 4 8 7 6 5 D2/K2 D2/K2 D1/K1 D1/K1 G1 S1 A1 G2 S2 A2 SOIC-8 Absolute Maximum Ratings T A=25°C

AO4902 Datasheet (149.79 KB)

AO4902 Datasheet Preview — Preview of AO4902 PDF

Datasheet Details

Part number:

AO4902

Manufacturer:

Alpha & Omega Semiconductors

File Size:

149.79 KB

Description:

Dual n-channel enhancement mode field effect transistor.

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AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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