AO4904 - Dual N-Channel Enhancement Mode Field Effect Transistor
The AO4904 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.
A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost effici
AO4904 Features
* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 K D2 1 2 3 4 8 7 6 5 SOIC-8 A G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
