AO4906 - Dual N-Channel Enhancement Mode Field Effect Transistor
The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.
A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficien
AO4906 Features
* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K G1 S1 K D2 A SOIC-8 G2 S2 Absolute Maximum Ratings T A=25°C unless otherw
