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AO4906 Datasheet - Alpha & Omega Semiconductors

AO4906, Dual N-Channel Enhancement Mode Field Effect Transistor

AO4906 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
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AO4906_AlphaOmegaSemiconductors.pdf

Preview of AO4906 PDF

Datasheet Details

Part number:

AO4906

Manufacturer:

Alpha & Omega Semiconductors

File Size:

143.98 KB

Description:

Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K G1 S1 K D2 A SOIC-8 G2 S2 Absolute Maximum Ratings T A=25°C unless otherw

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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