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AO4926 Dual N-Channel Enhancement Mode Field Effect Transistor

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Description

AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM .
The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Datasheet Specifications

Part number
AO4926
Manufacturer
Alpha & Omega Semiconductors
File Size
266.54 KB
Datasheet
AO4926_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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