Description
The AO7402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.
Features
- VDS (V) = 20V ID = 1.6 A (V GS = 4.5V) RDS(ON) < 90mΩ (VGS = 4.5V) RDS(ON) < 105mΩ (VGS = 2.5V) RDS(ON) < 130mΩ (VGS = 1.8V)
D
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 ±8 1.6 1.2 10 0.35 0.22 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristi.
AO7402_AlphaOmegaSemiconductors.pdf
