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AO7403 - P-Channel MOSFET

Description

The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.

Features

  • VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V) D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -20 ±8 -0.7 -0.5 -3 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C ID IDM PD TJ, TSTG TA=70°C W °C Junction and Storage Temperature Range Thermal Char.

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Datasheet preview – AO7403

Datasheet Details

Part number AO7403
Manufacturer Alpha & Omega Semiconductors
File Size 130.66 KB
Description P-Channel MOSFET
Datasheet download datasheet AO7403 Datasheet
Additional preview pages of the AO7403 datasheet.

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Full PDF Text Transcription

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AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7403 is Pb-free (meets ROHS & Sony 259 specifications). AO7403L is a Green Product ordering option. AO7403 and AO7403L are electrically identical. SC-70 (SOT-323) Top View G D S G S Features VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.
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