Description
The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.
Features
- VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V)
D
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation
A
Maximum -20 ±8 -0.7 -0.5 -3 0.35 0.22 -55 to 150
Units V V A
TA=25°C TA=70°C ID IDM PD TJ, TSTG
TA=70°C
W °C
Junction and Storage Temperature Range Thermal Char.
AO7403_AlphaOmegaSemiconductors.pdf
