Description
The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint.
Features
- VDS (V) = -20V ID = -0.6A (VGS = -4.5V)
RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.8V)
SC70-6L (SOT-363)
Top View
Bottom View
Pin1
S1 1 6 G1 2 5 D2 3 4
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A Pulsed Drain Current B
TA=25°C TA=70°C
ID IDM
Power Dissipation A
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range
TJ, TST.
AO7801-AlphaOmegaSemiconductors.pdf
